Wuxi, China – August 22, 2025, InnoScience, the world’s largest IDM dedicated to GaN technology today announced its vision for the “Chip Era” of power electronics. Speaking at the IPF 2025 Conference, Chairperson Dr. Luo Weiwei highlighted how gallium nitride (GaN) is transforming the industry through higher efficiency, automation, and standardization.
GaN devices deliver up to 15x lower turn-off losses and 3x lower turn-on losses versus silicon, enabling standardized zero-voltage switching designs with superior efficiency and consistency. By integrating passive components onto PCBs, GaN systems also unlock automated manufacturing and predictable EMI performance, reducing cost wile improving reliability.
“GaN allows us to move from craftsmanship to science, from manual assembly to automation, and from fragmentation to standardization,” said Dr Luo. “This marks the arrival of the chip era for power electronics.”
GaN adoption is expanding across AI servers and data centers, electric vehicles, and robotics, where it delivers higher density, lower energy uses, and enhanced, precision. With 8-inch GaN-on-Si mass production, fully integrated design-to-packaging capabilities and partnerships with leading global technology companies, InnoScience is strategically positioned to drive the compound semiconductor revolution.
About Innoscience
Innoscience (HKEX: 02577.HK) is the global leader in GaN process innovation and GaN power device manufacturing. Innoscience's device design and performance have set the global standard for GaN. The company's GaN products are widely used in low-voltage, medium-voltage and high-voltage applications, with GaN process node voltages ranging from 15V to 1200V. With 800+ patents granted or pending, Innoscience's products are known for their superior performance, reliability and functionality in applications from 20W to 20kW. Innoscience is committed to creating a bright future for GaN. For more information, please visit www.innoscience.com.
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