Dedicated to the development of power electronics systems for new energy vehicle
- · The joint laboratory is committed to GaN-based system design to build the future of new energy vehicle power electronics systems
- · Innoscience uses UAES’s professional system knowledge to improve GaN technology
Shanghai and Suzhou, July 29, 2025 - Innoscience (HKEX: 02577.HK), a leading global 8-inch GaN-on-Si (GaN-on-silicon) manufacturing supplier, and United Automotive Electronics (UAES), announced the establishment of a joint laboratory to develop advanced power electronics systems for new energy vehicles using the advantages of GaN technology in size, weight, and efficiency. The two parties held a joint laboratory unveiling ceremony at UAES (Suzhou R&D Center).
Due to the advantages of GaN technology over legacy silicon-based power devices, GaN power devices are widely used in electric vehicle, renewable energy systems, and AI data center power systems. Compared with traditional silicon, GaN-based converters and inverters can reduce power losses by up to 10 times, significantly improving efficiency and power density, and reducing system BOM costs, thus achieving smaller size and lighter weight, and reducing carbon dioxide emissions.
Dr. Xiaolu Guo, Deputy General Manager of United Electronics, said: “We are pleased to work with Innoscience, which has been committed to the mass production of GaN technology since 2015. This cooperation will strengthen the cooperation between the two parties, including senior management. We have developed a high power density on-board charger based on GaN. We look forward to continuing to strengthen our cooperation through this laboratory, boosting the innovation of GaN OBC solution.”
Dr. Jingang Wu, CEO of Innoscience, said: “We are pleased to establish a joint laboratory with UAES, a global leader in automotive electronics and a technology leader in wide bandgap power device applications. Innoscience has developed the industry’s highest performance and highest reliability GaN process, covering a voltage range from 15V to 1200V, and has the world’s largest 8-inch production capacity. We look forward to working with UAES to fully leverage our strengths in GaN and contribute to GaN-based electric vehicle technology innovation.”
Due to its material properties, GaN can achieve new standards of system performance in power conversion, significantly reducing losses, thereby improving efficiency, reducing volume and weight, and thus reducing system costs. The application range of GaN power devices has far exceeded consumer electronics, and has been mass produced in data centers, industrial and photovoltaic equipment, and has been used in electric vehicle power electronics systems.
About United Automotive Electronics (UAES)
United Automotive Electronic Systems Co., Ltd. (UAES), a joint venture of Zhong-Lian Automotive Electronics Co., Ltd and Robert Bosch GmbH, was established in 1995. UAES has four major business: Engine Management System, Transmission Control System, Advanced Network and E-mobility, as well as four minor business: Suspension Control System, Thermal Management System, Software and Service and Smart Sensors.With headquarter based in Shanghai, UAES operates production locations in Shanghai, Wuxi, Xi’an, Wuhu, Liuzhou and Taicang, and technical centers in Shanghai, Chongqing, Wuhu, Liuzhou and Suzhou. For 2024 the company sales reached 41.6 billion RMB and a headcount of over 11,000 by the end of the year. With strong technical background and localized R&D and production capability, UAES is providing diversified and customized solutions from components to systems for various domestic customers, making positive contributions to the high-quality development and transformation of the automotive industry with superior products and services.
For more information, please visit: http://www.uaes.com/servlet/portal/index.html.
About Innoscience
Innoscience (HKEX: 02577.HK) is the global leader in GaN process innovation and GaN power device manufacturing. Innoscience's device design and performance have set the global standard for GaN. The company's GaN products are widely used in low-voltage, medium-voltage and high-voltage applications, with GaN process node voltages ranging from 15V to 1200V. With 800+ patents granted or pending, Innoscience's products are known for their superior performance, reliability and functionality in applications from 20W to 20kW. Innoscience is committed to creating a bright future for GaN. For more information, please visit www.innoscience.com.
English
简体
