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INV100EQ030A

100V Bi-directional Enhancement-mode Power Transistor

1. Datasheet

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCQFN with 4.0 mm x 6.0 mm package size.

1.1 Features

Bi-directional blocking capability
GaN-on-Silicon E-mode HEMT technology
Ultra-low on resistance

1.2 Applications

BMS battery protection
High side load switch in bi-directional converter
Switch circuits in multiple power supplier system

2. Reliability Tests

Platform（V100E2.0I）
Product (INV100EQ030A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	T=30°C, RH=60%, 3 x reflow,192hrs	25 x 5	0 Fail	Pass
PLTC	-55 to +150°C, Air, 1000Cys.	77 x 5	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD=80V/120V,1000hrs	77 x 4	0 Fail	Pass
HAST	T=130°C, RH=85%, VD=42V,96hrs	77 x 4	0 Fail	Pass
HTSL	T=150°C,1000hrs	77 x 4	0 Fail	Pass

Parameter	Value
V_DD,max	100V
R_DD(on),max @ V_G = 5 V	3.2mΩ
Q_G,typ @ V_DD = 50 V	90nC
I_D,DC	100A
Qoss	85nC

Downloads

Datasheet

Product Reliability Report