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100V Bi-directional Enhancement-mode Power Transistor.

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4mm x 6mm package size.

Platform (V100E2.0I)
Product(INV100FQ030A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
HTRB	T=150°C, VD=80V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=150°C, VG=5.5V, 1000hrs	77 x 3	0 Fail	Pass
HTS	T=150°C	77 x 3	0 Fail	Pass
PLTC	-55 to +150°C, Air, 1000Cys	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD=120V, 1000hrs	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VD=42V, 96hrs	77 x 3	0 Fail	Pass
DHTOL	Vg=5V, Load current=16A(DC), Tj=125°C, Always on	8 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class C2a
IOL	ΔTj ≥100°C, ton/ toff=2 min /2 min, 7500cyc	77*3	0 Fail	Pass