ISG3201

100V Half-Bridge Solid-GaN Integrating Gate Driver

1. Datasheet

2x 100V, 3.2mohm Emode GaN HEMT with Half Bridge Driver (5mmx6.5mmx1.12mm LGA Package)

1.1 Features
  • 60A continuous current capability
  • Zero reverse recovery charge
  • Ultra-low on resistance
  • Minimum external components. (Driving resistor, bootstrap and Vcc capacitors integrated)
  • Reduced Gate Loop Inductance
  • Reduced Power Loop Inductance
  • Easy for power stage layout
  • Independent High-Side and Low-Side TTL Logic Inputs
  • High-side floating bias voltage rail operates up to 100 VDC
  • Fast Propagation Times (17ns Typical)
1.2 Applications

 

ISG3201 is suitable for high-frequency Buck converter, half bridge or full bridge converters, Class D audio amplifier, LLC converter and power modules in the following applications:

  • AI Server
  • Telecom
  • Super Computer
  • Motor Drive

2. 1000W DCDC module

2.1 Topology

2.2 Key specifications

High Efficiency:2000W/in^3

Small Size:36mm*24mm*7.5mm

High Power Density:98.3%

2.3 Applications

Server Power

Datacenter

ParameterValue
VDS,max 100V
RDS(on),max 

3.2mΩ+3.2mΩ

QG,typ

9.2nC+9.2nC

ID,Pulsed 230A

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