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40V Bi-directional GaN Enhancement-mode Power Transistor

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 6 mm x 4 mm package size.

Platform (B040E2.5)
Product (INN040FQ012A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=125°C, VD1=32V, 168hrs	77 x 1	0 Fail	Pass
HTRB	T=125°C, VD2=32V, 168hrs	77 x 1	0 Fail	Pass
HTGB	T=125°C, VG=5.5V, 168hrs	77 x 1	0 Fail	Pass
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 2	0 Fail	Pass
TC	-40 to +125°C, Air, 1000Cys	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD1=32V, 1000hrs	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD2=32V, 1000hrs	77 x 3	0 Fail	Pass
HTSL	T=150°C, 1000hrs	77 x 3	0 Fail	Pass
Drop test	Accelerometer: 1500G Durations: 0.5ms, 90Drops	77 x 1	0 Fail	Pass
Solderability	Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s	25 x 3	0 Fail	Pass
HTOL	Tj=125°C, Load current, 168hrs	8 x 1	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Pass
CDM	All Pins	3 x 1	0 Fail	Pass

3.1 Topology

3.2 Key specifications

Small size: L105mm*D80mm*H18mm

High current capability：200A

Simple structure and convenient control: PRT (low: off; high: on)

Low temperature rise: 25.3℃（200A@Ta=25℃,2.5m/s airflow,10pcs in parallel）

Battery reverse connection protection function

3.3 Applications

Load Switch