INN040W120A

40V Bi-GaN Enhancement-mode FET

1. Datasheet

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor(HEMT) in WLCSP with 1.2 mm x 1.7 mm package size.

1.1 Features
  • Bi-directional blocking capability
  • GaN-on-Silicon E-mode HEMT technology
  • Ultra-low on Resistance
1.2 Applications
  • High side load switch
  • OVP protection in smart phone USB port
  • Switch circuits in multiple power suppliers system

2. Reliability Tests

Platform (B040E2.5)
 Product (INN040W120A)
Test ItemsTest ConditionsSample Size (Unit x Lot)#FailResult
HTRB T=125°C, VD1=32V, 168hrs 77 x 1 0 Fail Pass
HTRB T=125°C, VD2=32V, 168hrs 77 x 1 0 Fail Pass
HTGB T=125°C, VG=5.5V, 168hrs 77 x 1 0 Fail Pass
MSL3 T=30°C, RH=60%, 3 x reflow, 192hrs 25 x 2 0 Fail Pass
TC -40 to +125°C, Air, 1000Cys 77 x 3 0 Fail Pass
H3TRB T=85°C, RH=85%, VD1=32V, 1000hrs 77 x 3 0 Fail Pass
H3TRB T=85°C, RH=85%, VD2=32V, 1000hrs 77 x 3 0 Fail Pass
HTSL T=150°C, 1000hrs 77 x 3 0 Fail Pass
Drop test

Accelerometer: 1500G   

Durations: 0.5ms, 90Drops   

77 x 1 0 Fail Pass
Solderability Pre-Con: 8hrs
Pb-free: 245±5°C, 5±0.5s
25 x 3 0 Fail Pass 
HTOL Tj=125°C, Load current, 168hrs 8 x 1 0 Fail Pass
HBM All Pins 3 x 1 0 Fail Pass
CDM All Pins 3 x 1 0 Fail Pass

ParameterValue
VDD,max 40V
RD1D2(on),max @ VG = 5 V 12mΩ
QG,typ @ VDD = 20 V 7.2nC
ID, DC 10A
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