1.1 Features
- Bi-directional blocking capability
- GaN-on-Silicon E-mode HEMT technology
- Ultra-low on Resistance
40V Bi-GaN Enhancement-mode FET
Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor(HEMT) based on advanced low voltage BiGaN Technology with ultra-low on resistance.
Platform (B040E2.5) | ||||
---|---|---|---|---|
Product (INN040W080A) | ||||
Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
HTRB | T=125°C, VD1=32V, 168hrs | 77 x 1 | 0 Fail | Pass |
HTRB | T=125°C, VD2=32V, 168hrs | 77 x 1 | 0 Fail | Pass |
HTGB | T=125°C, VG=5.5V, 168hrs | 77 x 1 | 0 Fail | Pass |
MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 2 | 0 Fail | Pass |
TC | -40 to +125°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
H3TRB | T=85°C, RH=85%, VD1=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
H3TRB | T=85°C, RH=85%, VD2=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
HTSL | T=150°C, 1000hrs | 77 x 3 | 0 Fail | Pass |
Drop test |
Accelerometer: 1500G Durations: 0.5ms, 90Drops |
77 x 1 | 0 Fail | Pass |
Solderability | Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s |
25 x 3 | 0 Fail | Pass |
HTOL | Tj=125°C, Load current, 168hrs | 8 x 1 | 0 Fail | Pass |
HBM | All Pins | 3 x 1 | 0 Fail | Pass |
CDM | All Pins | 3 x 1 | 0 Fail | Pass |
Vin:8~22V
Controller IC:SC8571
Iomax:14A
Bi-directional switch
OVP Application
OCP Application
Parameter | Value |
---|---|
VDD,max | 40V |
RDD(on),max @ VG = 5 V | 8mΩ |
QG,typ @ VDD = 20 V | 10.1nC |
ID,DC | 14A |