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INN040W048A

40V VGaN Enhancement-mode FET

1. Datasheet

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor(HEMT) based on advanced low voltage BiGaN Technology with ultra-low on resistance.

1.1 Features

Bi-directional blocking capability
GaN-on-Silicon E-mode HEMT technology
Ultra-low on Resistance

1.2 Applications

High side load switch
OVP protection in smart phone USB port
Switch circuits in multiple power suppliers system

2. Reliability Tests

Innoscience’s E-mode GaNFETs were subjected to a variety of reliability test under the condition referenced to typical for silicon-based power MOSFETs.These test items and results were shown as below:

Platform (B040E2.5)
Product (INN040W048A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL1	T=85°C, RH=85%, 3 x reflow, 168hrs	25 x 2	0 Fail	Pass
HTRB	T=125°C, VD1=32V, 1000hrs	77 x 3	0 Fail	Pass
HTRB	T=125°C, VD2=32V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=125°C, VG=5.5V, 1000hrs	77 x 3	0 Fail	Pass
TC	-40 to +125°C, Air, 1000Cys	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD1=32V, 1000hrs	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD2=32V, 1000hrs	77 x 3	0 Fail	Pass
HTSL	T=150°C, 1000hrs	77 x 3	0 Fail	Pass
HTOL	Tj=125°C, Load current=7A, 1000hrs	32 x 3	0 Fail	Pass
Drop test	Accelerometer: 1500G Durations: 0.5ms, 90Drops	77 x 1	0 Fail	Pass
Solderability	Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s	25 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class C2b