Shanghai, China – Innoscience, a global leader in gallium nitride (GaN) technology and high-volume GaN manufacturing, announced that its automotive-grade SolidGaN® ISG6127ATP-Q integrated GaN power device has received the Outstanding Market Performance Award at the 2026 Conference on Semiconductor Power Devices and Integrated Circuits (CSPSD 2026).

As one of China's leading forums for power semiconductor innovation, CSPSD brings together experts from government, industry, academia, and research institutions to promote the advancement and commercialization of next-generation power semiconductor technologies. The conference's annual Outstanding Power Semiconductor Product Awards recognize products that demonstrate exceptional innovation, commercial success, customer adoption, and proven value in real-world applications.

The Outstanding Market Performance Award recognizes products that excel in five key areas: technological innovation, large-scale commercialization, customer acceptance, application value, and operational reliability. The award highlights products that have successfully transitioned from innovation to high-volume production while delivering measurable benefits to the power electronics industry.

Designed for Next-Generation Automotive Power Conversion

The ISG6127ATP-Q is an automotive-qualified SolidGaN® integrated power device developed by Innoscience for high-frequency, high-power-density onboard power conversion systems. Housed in a compact TOLT-16L package and fully qualified to the AEC-Q100 automotive reliability standard, the device enables designers to achieve higher efficiency, increased power density, and simplified system implementation.

Key Features

• Integrated GaN Power Stage
  • Combines a 650 V, 27 mΩ enhancement-mode GaN HEMT with an integrated gate driver IC in a single package, reducing external component count and simplifying PCB design.
• Wide Gate Supply Range
  • Integrated precision LDO-based gate clamp circuitry supports a 10 V to 24 V gate supply voltage range for greater design flexibility.
• High dv/dt Immunity
  • An integrated Miller Clamp with a typical 0.5 Ω on-resistance suppresses false turn-on during high-speed switching and provides 100 V/ns dv/dt immunity, enabling robust operation in demanding automotive environments.
• Adjustable Switching Performance
  • Independent turn-on and turn-off slew rates can be optimized using external gate resistors, allowing designers to balance efficiency, EMI performance, and system reliability.
• High Efficiency and Superior Thermal Performance
  • Zero reverse recovery charge (QRR = 0) minimizes switching losses and enables operation at switching frequencies up to 2 MHz. An optimized thermal structure delivers an ultra-low top-side thermal resistance of 0.30 °C/W, supporting high-power-density system designs.

Proven Automotive Deployment

The ISG6127ATP-Q has entered volume production for automotive applications and is being adopted by leading automotive Tier 1 suppliers serving China's new energy vehicle (NEV) market.

The device is currently deployed in integrated 6.6 kW onboard charger (OBC) and 3.5 kW bidirectional DC/DC converter platforms, helping enable compact, lightweight, high-efficiency three-in-one onboard power systems for next-generation electric vehicles.

Advancing Automotive GaN Adoption

The CSPSD 2026 Outstanding Market Performance Award recognizes both the technical innovation and commercial success of Innoscience's automotive SolidGaN® platform. As automotive manufacturers continue to pursue higher efficiency, increased power density, and faster charging capabilities, GaN technology is playing an increasingly important role in next-generation vehicle power architectures.

Leveraging the industry's first high-volume 8-inch GaN-on-Silicon IDM manufacturing platform, Innoscience continues to expand its automotive SolidGaN® portfolio while accelerating innovation across electric vehicles, industrial power, renewable energy, and energy storage applications.

Click here to view more information about the ISG6127ATP-Q product.