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1.1 特性
- 硅基GaN E型HEMT技术
- 满足工业应用
- 极低的栅极电荷
- 超低导通电阻
- 超小占板面积
- 零反向恢复电荷
产品
INN100EBD025DAD
100V增强型GaN功率晶体管
1. 产品描述
基于先进GaN技术的100V硅基氮化镓增强型高电子迁移率晶体管，采用En-FCLGA 5 mm x 6 mm 封装。
1.2 应用市场
- 高频DC-DC转换器
- 高密度DC/DC电源模块
- 同步整流
- 电机驱动
- 太阳能系统MPPT
2. 可靠性测试
| Spin off Qualification Result | |||||
|---|---|---|---|---|---|
| Note: * Spin off products have same device process and design, H/LTRB, H/LTGB+/, H/LTGB- test refer to INN100EA035A and INN100EBD018DAD. Note: EN-LGA 3.3X3.3 and EN-LGA 5x6 have same package process, EN-LGA 5x6 package reliability refer to EN-LGA 3.3x3.3 (INN100EA035A) and verify 3 lots TC and 1lot package related reliability (MSL3/H3TRB /uHAST/IOL/RSH/Solderability). | |||||
| Test Items | Test Condition | INN100EBD018DAD | INN100EBD025DAD | INN100EBD050DAD | Result |
| HTRB | T=150°C, VD=100V, 168hrs | 77 x 1 | 77 x 1 | 77 x 1 | Pass |
| LTRB | T=-40°C, VD=100V, 168hrs | 77 x 1 | 77 x 1 | 77 x 1 | Pass |
| HTGB | T=150°C, VG=6V, 168hrs | 77 x 1 | 77 x 1 | 77 x 1 | Pass |
| LTGB | T=-40°C, VG=6V, 168hrs | 77 x 1 | 77 x 1 | 77 x 1 | Pass |
| ESD-HBM | T=25°C, All pin | 10 x 1 | 10 x 1 | 10 x 1 | Class_1B |
| ESD-CDM | T=25°C, All pin | 10 x 1 | 10 x 1 | 10 x 1 | Class_C2a |
| MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 1 | /* | /* | Pass |
| H3TRB | T=85°C, RH=85%, VD=80V, 1000hrs | 77 x 1 | /* | /* | Pass |
| PLTC | -55 to +150°C, Air, 1000Cycles | 77 x 3 | /* | /* | Pass |
| uHAST | T=130°C, RH=85% | 77 x 1 | /* | /* | Pass |
| IOL | ΔTj ≥ 125℃; ton / toff = 1 min /5 min, 5000 Cycles | 77 x 1 | /* | /* | Pass |
| RSH | T=125°C bake 24hrs, T=30°C RH=60% soak 192hrs, | 30 x 1 | /* | /* | Pass |
| 260±5℃, 10±1s | |||||
| Solderability | Precondition Condition C (8hrs), Pb-free：245±5℃, 5±0.5s | 10 x 1 | /* | /* | Pass |
