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1.1 特性
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支持双向导通，无反向恢复
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超低导通电阻
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6mm x 4mm FCQFN封装，寄生参数小
产品
INN040FQ012A
40V双向导通增强型场效应晶体管
1. 产品描述
基于先进的VGaN技术及极低导通电阻的双向导通40V硅基氮化镓增强型高电子迁移率晶体管，采用6mm x 4mm FCQFN封装。
1.2 应用市场
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高侧负载开关
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智能手机USB端口中的OVP保护
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多电源系统中的开关电路
2. 可靠性测试
| Platform (B040E2.5) | ||||
|---|---|---|---|---|
| Product (INN040FQ012A) | ||||
| Test Items | Test Conditions | Sample Size (Unit x Lot) | #Fail | Result |
| MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 2 | 0 Fail | Pass |
| HTRB | T=125°C, VD1=32V, 168hrs | 77 x 1 | 0 Fail | Pass |
| HTRB | T=125°C, VD2=32V, 168hrs | 77 x 1 | 0 Fail | Pass |
| HTGB | T=125°C, VG=5.5V, 168hrs | 77 x 1 | 0 Fail | Pass |
| TC | -40 to +125°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VD1=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VD2=32V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTSL | T=150°C, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTOL | Tj=125°C, Load current=25A, 168hrs | 8 x 1 | 0 Fail | Pass |
| Drop test | Accelerometer: 1500G Durations: 0.5ms, 90Drops | 77 x 1 | 0 Fail | Pass |
| Solderability | Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s | 25 x 3 | 0 Fail | Pass |
| HBM | All Pins | 3 x 1 | 0 Fail | Class 1B |
| CDM | All Pins | 3 x 1 | 0 Fail | Class C2b |
3. 5V/200A Load Switch参考方案
3.1 拓扑图
3.2 关键规格
小尺寸: L105mm*D80mm*H18mm
最大带载电流：200A
控制简单: PRT (low: off; high: on)
低温升: 25.3℃（200A@Ta=25℃，2.5m/s airflow，10pcs in parallel）
自带电池反接保护
3.3 应用领域
负载开关
| Parameter | Value |
|---|---|
| VDD,max | 40V |
| RDD(on),max @ VG = 5 V | 1.2mΩ |
| QG,typ @ VDD = 20 V | 60nC |
| ID,DC | 100A |