1.1 特性
- 增强型晶体管-常闭型功率开关
- 极高的开关频率
- 零反向恢复电荷
- 低栅极电荷,低输出电荷
- 符合JEDEC标准的工业应用资格
- ESD 保护
- 符合RoHS、 Pb-free、 REACH等认证
700V 氮化镓增强型功率晶体管
采用TO-252 封装的700V 硅基氮化镓增强型功率晶体管
英诺赛科的增强型氮化镓场效应晶体管在参考硅基功率MOSFET的条件下经过了全面的可靠性测试,这些测试项目及结果如下所示:
| Platform ( INN650D080BS/INN700D080BS) | ||||
|---|---|---|---|---|
| Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
| HTRB | T=150°C, VDS= 560V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTGB | T=150°C, VGS= 7V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| *HTGB(-) | T=150°C, VGS= -6V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| TC | -55 to +150°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, VDS=100V, 96hrs | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VDS=560V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
| HBM | All Pins | 3 x 1 | 0 Fail | Class 2 |
| CDM | All Pins | 3 x 1 | 0 Fail | Class C3 |
| HTOL (LLC) | Tj=125°C, Input: 220 Vac, Vout=48V, Vplat=400V, fsw=130KHz | 10 x 3 | 0 Fail | Pass |
| HTOL(QR-PFC) | Tj=125°C, Input: 90 Vac, Output: 20V/6.5A, F=120KHz(QR)/100KHz(PFC) | 10 x 3 | 0 Fail | Pass |
| Note:*HTGB(-)was optional test item for device with bidirectional ESD design. | ||||
|
Spin-off Product | ||||
| Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
| HTRB | T=150°C, VDS= 560V, 168hrs | 77 x 1 | 0 Fail | Pass |
| HTGB | T=150°C, VGS= 7V, 168hrs | 77 x 1 | 0 Fail | Pass |
| New Package Type Qualification test | ||||
| Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
| TC | -55 to +150°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, VDS=100V, 96hrs | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VDS=560V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
| Note: Package type Spin off have the same package process and design rules | ||||